1/8 www.dynexsemi.com ds2107syds2107sv key parameters v rrm 4500v i f(av) 3329a i fsm 52500a ds2107sy/ds2107sv rectifier diode replaces december 2001 version, ds4173-4.1 ds4173-5.0 febraury 2003 4500 4400 4300 4200 4100 4000 ds2107sy45 ds2107sy44 ds2107sy43 ds2107sy42 ds2107sy41 ds2107sy40 conditions v rsm = v rrm + 100v lower voltage grades available. type number repetitive peak reverse voltage v rrm v features double side cooling high surge capability applications rectification freewheel diode dc motor control power supplies welding battery chargers voltage ratings ordering information when ordering, select the required part number shown in the voltage ratings selection table, e.g.: ds2107sy43 for a 43 00v device in a y outline or ds2107sy43 for a 4 3 00v device in a v outline note: please use the complete part number when ordering and quote this number in any future correspondance relating to your order. see package details for further information. fig. 1 package outlines outline type code: y outline type code: v
2/8 www.dynexsemi.com ds2107sy/ds2107sv symbol parameter conditions double side cooled i f(av) mean forward current i f(rms) rms value i f continuous (direct) forward current single side cooled (anode side) i f(av) mean forward current i f(rms) rms value i f continuous (direct) forward current units max. half wave resistive load 2590 a - 4070 a - 3510 a half wave resistive load 1710 a - 2685 a - 2110 a current ratings t case = 75 o c unless otherwise stated symbol parameter conditions double side cooled i f(av) mean forward current i f(rms) rms value i f continuous (direct) forward current single side cooled (anode side) i f(av) mean forward current i f(rms) rms value i f continuous (direct) forward current units max. half wave resistive load 3329 a - 5229 a - 4941 a half wave resistive load 2221 a - 3489 a - 3073 a t case = 100 o c unless otherwise stated
3/8 www.dynexsemi.com ds2107syds2107sv surge ratings conditions 10ms half sine; t case = 150 o c v r = 50% v rrm - 1/4 sine 10ms half sine; t case = 150 o c v r = 0 max. units symbol parameter i fsm surge (non-repetitive) forward current i 2 ti 2 t for fusing i fsm surge (non-repetitive) forward current i 2 t i 2 t for fusing a 2 s 52.5 ka 8.82 x 10 6 a 2 s 42.0 ka thermal and mechanical data dc conditions min. max. units o c/w - 0.019 anode dc clamping force 43.0kn with mounting compound thermal resistance - case to heatsink r th(c-h) 0.002 double side - 150 o c t vj virtual junction temperature t stg storage temperature range reverse (blocking) single side - thermal resistance - junction to case r th(j-c) single side cooled symbol parameter clamping force 38.0 47.0 kn ?5 150 o c forward (conducting) 160 o c - 0.004 o c/w o c/w cathode dc - 0.019 o c/w double side cooled - 0.0095 o c/w 13.8 x 10 6 - -
4/8 www.dynexsemi.com ds2107sy/ds2107sv characteristics forward voltage peak reverse current parameter c 5000 q s total stored charge symbol v fm i rm i rr peak reverse recovery current - 150 a - at v rrm , t case = 150 o c - 250 ma - 1 .275 v at 3000a peak, t case = 25 o c conditions min. max. units at t vj = 150?c - v to threshold voltage r t slope resistance 0.167 m ? at t vj = 150?c - 0.77 v i f = 2000a, di rr /dt = 3a/ s t case = 150?c, v r = 100v curves fig.2 maximum (limit) forward characteristics fig.3 dissipation curves v fm equation:- v fm = a + bln (i f ) + c.i f +d. i f where a = 0.671711 b = 0.011006 c = 0.000158 d = 0.000604 these values are valid for t j = 1 50 ?c for i f 500a to 5000a 0.5 0.7 0.9 1.1 1.5 1.3 1.4 0.6 0.8 1.0 1.2 instantaneous forward voltage, v f -(v) 0 1000 2000 3000 4000 5000 instantaneous forward current, i f - (a) measured under pulse conditions t j = 150 ? c 0 2000 4000 6000 mean forward current, i f(av) - (a) 0 2000 4000 6000 8000 10000 mean power dissipation - (w) dc half wave 3 phase 6 phase
5/8 www.dynexsemi.com ds2107syds2107sv fig.4 total stored charge fig.5 maximum reverse recovery current fig.7 maximum (limit) transient thermal impedance - junction to case fig.6 surge (non-repetitive) forward current vs time (with 50% v rrm at t case 150?c) 0.1 1.0 10 100 rate of decay of forward current, di f /dt - (a/s) 100000 10000 1000 stored charge, q s - (c) conditions: t j = 150 ? c v r = 100v i f = 2000a i rr i f di f /dt q s 0.1 1.0 10 100 rate of decay of forward current, di f /dt - (a/s) 1000 100 10 reverse recovery current, i rr - (a) conditions: t j = 150 ? c v r = 100v i f = 2000a 1101235102050 0 20 40 60 80 100 120 4 6 2 8 10 i 2 t value - (a 2 s x 10 6 ) ms cycles at 50hz duration peak half sine forward current - (ka) i 2 t = 2 x t 2 i 2 t 10 1 0.1 0.01 0.001 time - (s) 0.1 0.01 0.001 0.0001 thermal impedance - ( ? c/w) double side cooled anode side cooled 100 conduction d.c. halfwave 3 phase 120 ? 6 phase 60 ? effective thermal resistance junction to case ? c/w double side 0.0095 0.0105 0.0112 0.0139 single side 0.019 0.020 0.0207 0.0234
6/8 www.dynexsemi.com ds2107sy/ds2107sv hole 3.6 x 2.0 deep (one in each electrode) 37.7 36.0 cathode anode 73 nom 112.5 max 73 nom nominal weight: 1600g clamping force: 43kn 10% package outline type code: y note: some packages may be supplied with gate pins and/or tags. package details for further package information, please visit our website or contact customer services. all dimensions in mm, unless stated o therwise. do not scale.
7/8 www.dynexsemi.com ds2107syds2107sv holes 3.6 x 2.0 deep (in both electrodes) 73 nom cathode anode 27.0 25.4 73 nom 112.5 max nominal weight: 1100g clamping force: 43kn 10% package outline type code: v note: some packages may be supplied with gate pins and/or tags. package details for further package information, please visit our website or contact customer services. all dimensions in mm, unless stated o therwise. do not scale.
www.dynexsemi.com power assembly capability the power assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. we offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today . the assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. using the latest cad methods our team of design and applications engineers aim to provide the power assembly complete solution (pacs). heatsinks the power assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of dynex semiconductors. data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. for further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer services. customer service tel: +44 (0)1522 502753 / 502901. fax: +44 (0)1522 500020 sales offices benelux, italy & switzerland: tel: +33 (0)1 64 66 42 17. fax: +33 (0)1 64 66 42 19. france: tel: +33 (0)2 47 55 75 52. fax: +33 (0)2 47 55 75 59. germany, northern europe, spain & rest of world: tel: +44 (0)1522 502753 / 502901. fax: +44 (0)1522 500020 north america: tel: (949) 733-3005. fax: (949) 733-2986. these offices are supported by representatives and distributors in many countries world-wide. ?dynex semiconductor 2002 technical documentation ?not for resale. produced in united kingdom headquarters operations dynex semiconductor ltd doddington road, lincoln. lincolnshire. ln6 3lf. united kingdom. tel: +44-(0)1522-500500 fax: +44-(0)1522-500550 this publication is issued to provide information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. no warranty or guarantee express or implied is made regard ing the capability, performance or suitability of any product or service. the company reserves the right to alter without prior notice the specification, design or price of any product or service. information con cerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. it is the user's responsibility to fully deter mine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. these products are not suitable for use in any me dical products whose failure to perform may result in significant injury or death to the user. all products and materials are sold and services provided subject to the company's conditions of sale, w hich are available on request. all brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respec tive owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com datasheet annotations: dynex semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. the annota tions are as follows:- target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product is in design and development. the datasheet represents the product as it is understood but details may change. advance information: the product design is complete and final characterisation for volume production is well in hand. no annotation: the product parameters are fixed and the product is available to datasheet specification.
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